RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION
AbstractIn addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3Ã—1013 to 6Ã—1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.
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How to Cite
Ahmad Fauzi, D., Alang Md Rashid, N. K., Mohamed Zin, M. R., & Hasbullah, N. F. (2017). RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION. IIUM Engineering Journal, 18(1), 101–109. https://doi.org/10.31436/iiumej.v18i1.653
Electrical, Computer and Communications Engineering