RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

Dhiyauddin Ahmad Fauzi, Nahrul Khair Alang Md Rashid, Muhammad Rawi Mohamed Zin, Nurul Fadzlin Hasbullah

Abstract


In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

Full Text:

PDF

View Counters:

Abstract - 43 PDF - 45

Refbacks

  • There are currently no refbacks.


ISSN:    1511-788X
E-ISSN: 2289-7860


Creative Commons License
IIUM Engineering Journal by http://journals.iium.edu.my/ejournal/index.php/iiumej/index is licensed under a Creative Commons Attribution 4.0 International License