RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

  • Dhiyauddin Ahmad Fauzi International Islamic University Malaysia
  • Nahrul Khair Alang Md Rashid International Islamic University Malaysia
  • Muhammad Rawi Mohamed Zin Malaysian Nuclear Agency, Bangi, Selangor
  • Nurul Fadzlin Hasbullah International Islamic University Malaysia

Abstract

In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

Author Biographies

Nahrul Khair Alang Md Rashid, International Islamic University Malaysia

Department of Mechatronics Engineering,

International Islamic University Malaysia

Muhammad Rawi Mohamed Zin, Malaysian Nuclear Agency, Bangi, Selangor
Materials Technology Group
Nurul Fadzlin Hasbullah, International Islamic University Malaysia

Department of Electrical and Computer Engineering

International Islamic University Malaysia

Published
2017-05-30
How to Cite
Ahmad Fauzi, D., Alang Md Rashid, N. K., Mohamed Zin, M. R., & Hasbullah, N. F. (2017). RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION. IIUM Engineering Journal, 18(1), 101-109. Retrieved from http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/653
Section
Electrical, Computer and Communications Engineering