ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE

  • Ikrom gulamjonovich Tursunov Faculty of Physics, National University of Uzbekistan, 100174 Tashkent, Uzbekistan
  • Abdurahim Abduraxmonovich Okhunov Department of Science, Kulliyyah of Engineering, International Islamic University Malaysia
  • Odiljon Oxundadaevich Mamatkarimov Department of Physics, Namangan Engineering and Technology Institute
Keywords: semiconductors, properties, dynamic and deep levels

Abstract

ABSTRACT: This paper discusses the strain sensitivity of silicon with deep levels under variable pressure. It is shown that in the pressure swing in silicon with deep levels, there is a redistribution of the primary spatial inhomogeneities in the distribution of impurities so that the electron-hole relaxation after stress relief will occur in the new potential relief.

ABSTRAK: Kajian ini membincangkan tentang sensitiviti kepekaan strain silikon pada pelbagai tahap dalam tekanan. Keputusan menunjukkan terdapat ketidakharmonian agihan pada spasial utama dalam agihan kotoran dengan ayunan tekanan dalam silikon pada tahap dalam, supaya relaksasi lubang-elektron setelah pelepasan tekanan akan berlaku dalam pelepasan potensi baru.

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References

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Published
2018-12-01
How to Cite
Tursunov, I. gulamjonovich, Okhunov, A. A., & Mamatkarimov, O. O. (2018). ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE. IIUM Engineering Journal, 19(2), 164 - 171. https://doi.org/10.31436/iiumej.v19i2.794
Section
Engineering Mathematics and Applied Science