A COMPARATIVE ANALYSIS OF EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

Authors

  • Md. Abdullah Al Humayun 1. International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia 2. Green University of Bangladesh, Dhaka -1207, Bangladesh
  • AHM Zahirul Alam International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia https://orcid.org/0000-0003-4259-2852
  • Sheroz Khan International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia
  • MohamedFareq AbdulMalek University of Wollongong in Dubai, Dubai, United Arab Emirates
  • Mohd Abdur Rashid Noakhali Science & Technology University, Noakhali 3814, Bangladesh.

DOI:

https://doi.org/10.31436/iiumej.v18i2.703

Keywords:

Bose, BAND-GAP

Abstract

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.

Downloads

Download data is not yet available.

Metrics

Metrics Loading ...

Author Biographies

Md. Abdullah Al Humayun, 1. International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia 2. Green University of Bangladesh, Dhaka -1207, Bangladesh

1. Department of Electrical and Computer Engineering

2. Department of Electrical and Electronic Engineering

AHM Zahirul Alam, International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia

Professor, Department of Electrical and Computer Engineering, Faculty of Engineering

Sheroz Khan, International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia

Associate Professor, Department of Electrical and Computer Engineering, Faculty of Engineering

MohamedFareq AbdulMalek, University of Wollongong in Dubai, Dubai, United Arab Emirates

Associate Professor, Faculty of Engineering and Information Sciences

Mohd Abdur Rashid, Noakhali Science & Technology University, Noakhali 3814, Bangladesh.

Professor, Department of Electrical and Electronic Engineering, Noakhali Science & Technology University, Noakhali 3814, Bangladesh.

References

[1] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides”, Nature Nanotechnology, Vol. 7, no. 11, pp. 699-712, 2012.
[2] R. Passler, “Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN”, Journal of Applied Physics, Vol. 90, no. 8, pp 3956-3964,2001.
[3] W. Walukiewicz, S.X. Li, J.Wu, K.M. Yu, J.W. Ager , E.E. Haller, Hai Lu, William J.Schaff, “Optical properties and electronic structure of InN and In-rich group III-nitride alloys”, Journal of Crystal Growth, Vol. 269, pp. 119–127, 2004.
[4] K. Cui, S. Fathololoumi, M. G. Kibria, G. A. Botton, Z. Mi, “Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si (111) substrates”, Nanotechnology, Vol. 23, no. 8, 085205, 2012.
[5] P. K. Sarswat, M. L. Free, “A study of energy band gap versus temperature for Cu2ZnSnS4 thin films”, Physica B: Condensed Matter,Vol. 407, no. 1, pp. 108-111, 2012.
[6] M. A. Humayun, M. A. Rashid, F. Malek, A. N. Hussain, “Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature InxGa1− xN quantum-dot lasers”, Journal of Russian Laser Research, Vol.33, no. 4, pp. 387-394, 2012.
[7] M. A. Rashid, A.Yusuf, M. A., Humayun, A. K. N. M. Al-Khateeb, S. Tamaki, “Stability analysis of solar cell characteristics above room temperature using indium nitride based quantum dot”, American Journal of Applied Sciences, Vol. 10, no. 11, pp. 1345-1350, 2013.
[8] M. M. Hossain, M. A. Humayun, M. T. Hasan, A. G. Bhuiyan, A. Hashimoto and A.Yamamoto, “Proposal of high performance 1.55 µm quantum dot heterostructure laser using InN”, IEICE Transactions on Electronics, Vol. 95, no. 2, pp. 255-261.
[9] L.Gupta, S.Rath, S. C. Abbi and F. C. Jain, “Temperature dependence of the fundamental band gap parameters in cadmium-rich ZnxCd1-xSe using photoluminescence spectroscopy. ”, Journal of Physics, Indian Academy of Sciences, Vol. 61, no. 4 pp. 729–737, 2003.
[10] K. P. O’Donnell and X. Chen, “Temperature dependence of semiconductor band gaps” Appl. Phys. Lett., Vol. 58, no. 25, pp 2924-2926, 1991.
[11] J. Wu, W.Walukiewicz, “Band gaps of InN and group III nitride alloys”, Super-lattices and Microstructures, Vol. 34, pp 63–75, 2003.
[12] F.J. Manjon, M. A. Hernandez-Fenollosa, B. Mari, S. F. Li, C. D. Poweleit, A. Bell, J. Menendez and M. Cardona, “Effect of N isotopic mass on the photoluminescence and cathodoluminescence spectra of gallium nitride”, The European Physical Journal B, Vol. 40, pp 453–458, 2004.
[13] M. Tangi, P. Mishra, T. K. Ng, M. N. Hedhili, B. Janjua, M. S. Alias, D. H., Anjum, C. .C. Tseng, Y. Shi, H. J. Joyce, and L. J. Li, “Determination of band offsets at GaN/single-layer MoS2 heterojunction. Applied Physics Letters Vol. 109 no. 3, p.032104, 2016.

Downloads

Published

2017-12-01

How to Cite

Al Humayun, M. A., Alam, A. Z., Khan, S., AbdulMalek, M., & Rashid, M. A. (2017). A COMPARATIVE ANALYSIS OF EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL. IIUM Engineering Journal, 18(2), 151–157. https://doi.org/10.31436/iiumej.v18i2.703

Issue

Section

Electrical, Computer and Communications Engineering