Tursunov, Ikrom gulamjonovich, Abdurahim Abduraxmonovich Okhunov, and Odiljon Oxundadaevich Mamatkarimov. “ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE”. IIUM Engineering Journal 19, no. 2 (December 1, 2018): 164–171. Accessed April 20, 2024. https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/794.