TURSUNOV, Ikrom gulamjonovich; OKHUNOV, Abdurahim Abduraxmonovich; MAMATKARIMOV, Odiljon Oxundadaevich. ABOUT THE SILICON SENSITIVITY OF THE DEEP LEVEL WITH ALTERNATING PRESSURE. IIUM Engineering Journal, [S. l.], v. 19, n. 2, p. 164–171, 2018. DOI: 10.31436/iiumej.v19i2.794. Disponível em: https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/794. Acesso em: 29 mar. 2024.