JUNG, Hakkee. Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect. IIUM Engineering Journal, [S. l.], v. 24, n. 1, p. 75–87, 2023. DOI: 10.31436/iiumej.v24i1.2508. Disponível em: https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/2508. Acesso em: 30 nov. 2024.