TY - JOUR AU - Ahmad Fauzi, Dhiyauddin AU - Alang Md Rashid, Nahrul Khair AU - Mohamed Zin, Muhammad Rawi AU - Hasbullah, Nurul Fadzlin PY - 2017/05/30 Y2 - 2024/03/29 TI - RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION JF - IIUM Engineering Journal JA - IIUMEJ VL - 18 IS - 1 SE - Electrical, Computer and Communications Engineering DO - 10.31436/iiumej.v18i1.653 UR - https://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/653 SP - 101-109 AB - In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×10<sup>13 </sup>to 6×10<sup>14 </sup>neutron/cm<sup>2</sup> in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample. ER -