A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

  • Md. Abdullah Al Humayun 1. International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia 2. Green University of Bangladesh, Dhaka -1207, Bangladesh
  • AHM Zahirul Alam International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia
  • Sheroz Khan International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia
  • MohamedFareq AbdulMalek University of Wollongong in Dubai, Dubai, United Arab Emirates
  • Mohd Abdur Rashid Noakhali Science & Technology University, Noakhali 3814, Bangladesh.

Abstract

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.

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Author Biographies

Md. Abdullah Al Humayun, 1. International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia 2. Green University of Bangladesh, Dhaka -1207, Bangladesh

1. Department of Electrical and Computer Engineering

2. Department of Electrical and Electronic Engineering

AHM Zahirul Alam, International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia
Professor, Department of Electrical and Computer Engineering, Faculty of Engineering
Sheroz Khan, International Islamic University Malaysia, Gombak, Kuala Lumpur, Malaysia
Associate Professor, Department of Electrical and Computer Engineering, Faculty of Engineering
MohamedFareq AbdulMalek, University of Wollongong in Dubai, Dubai, United Arab Emirates
Associate Professor, Faculty of Engineering and Information Sciences
Mohd Abdur Rashid, Noakhali Science & Technology University, Noakhali 3814, Bangladesh.
Professor, Department of Electrical and Electronic Engineering, Noakhali Science & Technology University, Noakhali 3814, Bangladesh.

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Published
2017-12-01
How to Cite
Al Humayun, M. A., Alam, A., Khan, S., AbdulMalek, M., & Rashid, M. (2017). A COMPARATIVE ANALYSIS OF THE EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL. IIUM Engineering Journal, 18(2), 151-157. https://doi.org/10.31436/iiumej.v18i2.703
Section
Electrical, Computer and Communications Engineering